Автор туралы ақпарат
Денисов, С. А.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 53, № 3 (2024) | INSTRUMENTATION | Development of the Ge-MDST instrument structure with an induced p-type channel | |
| Том 54, № 4 (2025) | TECHNOLOGIES | MULTILAYER EPITAXIAL SILICON STRUCTURES WITH SUBMICRON LAYERS GROWN BY SUBLIMATION MOLECULAR BEAM EPITAXI |