作者的详细信息

Денисов, С. А.

期	栏目	标题	文件
卷 53, 编号 3 (2024)	INSTRUMENTATION	Development of the Ge-MDST instrument structure with an induced p-type channel
卷 54, 编号 4 (2025)	TECHNOLOGIES	MULTILAYER EPITAXIAL SILICON STRUCTURES WITH SUBMICRON LAYERS GROWN BY SUBLIMATION MOLECULAR BEAM EPITAXI

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