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Fermi level pinning on the (110) oxidized surface of AIII-Sb semiconductors
- Authors: Alekseev P.A.1, Smirnov A.N.1, Sharov V.A.1, Borodin B.R.1, Kunitsyna E.V.1
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Affiliations:
- Ioffe Physical-Technical Institute of the Russian Academy of Sciences
- Issue: Vol 87, No 6 (2023)
- Pages: 829-832
- Section: Articles
- URL: https://stomuniver.ru/0367-6765/article/view/654380
- DOI: https://doi.org/10.31857/S0367676523701430
- EDN: https://elibrary.ru/VLLSLD
- ID: 654380
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Abstract
Pinning of the Fermi level on the oxidized (110) surface of AIII-Sb semiconductors (GaSb, Ga0.78In0.22As0.18Sb0.82, Ga0.66Al0.34As0.025Sb0.975) was studied. It is shown that the Fermi level is pinned at 4.65 ± 0.1 eV from the vacuum level. The presence of Sb was shown for the photooxidized Ga0.78In0.22As0.18Sb0.82 and Ga0.66Al0.34As0.025Sb0.975 surfaces. The formation of Sb on the surface because of faster oxidation of group III elements results in pinning of the Fermi level at the same distance from the vacuum level in III-Sb compounds.
About the authors
P. A. Alekseev
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Author for correspondence.
Email: prokhor@mail.ioffe.ru
Russia, 194021, Saint-Petersburg
A. N. Smirnov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: prokhor@mail.ioffe.ru
Russia, 194021, Saint-Petersburg
V. A. Sharov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: prokhor@mail.ioffe.ru
Russia, 194021, Saint-Petersburg
B. R. Borodin
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: prokhor@mail.ioffe.ru
Russia, 194021, Saint-Petersburg
E. V. Kunitsyna
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: prokhor@mail.ioffe.ru
Russia, 194021, Saint-Petersburg
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