The interruption of the generation of a narrowly focused component of stimulated picosecond emission of the AlXGa1–XAs–GaAs–AlXGa1–XAs heterostructure produced by a part of the component reflected from the end face

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Resumo

Experimentally, new characteristics of the effect of interrupting generation in the AlxGa1–xAs–GaAs–AlxGa1–xAs heterostructure of a narrowly directed (exiting from the end of the hetero-structure in a certain direction) spectral component of picosecond stimulated emission have been established. These characteristics are dependencies on the distance between the center of the active region and the end of the heterostructure of: a) the duration of the component at the base; b) the energy of that part of the component reflected by the end face, upon passage of which through the active region, the generation of the component is interrupted.

Sobre autores

I. Bronevoi

Kotelnikov Institute of Radioengeneering and Electronics RAS

Email: bil@cplire.ru
Mokhovaya Str., 11, build. 7, Moscow, 125009

A. Krivonosov

Kotelnikov Institute of Radioengeneering and Electronics RAS

Mokhovaya Str., 11, build. 7, Moscow, 125009

Bibliografia

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