Informaçao sobre o Autor

Belorusov, D. A.

Edição	Seção	Título	Arquivo
Volume 68, Nº 10 (2023)	НАНОЭЛЕКТРОНИКА	Influence of conditions for the formation of hafnium oxide films on the structural and electrical properties of heterostructures.
Volume 68, Nº 9 (2023)	К 70-ЛЕТИЮ ИРЭ ИМ. В.А. КОТЕЛЬНИКОВА РАН	The Franz-Keldysh effect in silicon–ultrathin (3.7 nm) oxide–polysilicon structures
Volume 69, Nº 7 (2024)	НАНОЭЛЕКТРОНИКА	Determination of constants and construction of field dependences of parameters of metal-oxide-semiconductor structures with ultrathin layers of silicon oxide based on their experimental high-frequency voltage-capacitance-characteristics
Volume 69, Nº 7 (2024)	НАНОЭЛЕКТРОНИКА	Application of high–frequency impedance model of metal–three-layer insulating gap-silicon structures to characteristics of real objects